NCE60P50K Datasheet, MOSFET, NCE Power Semiconductor

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NCE60P50K Features and benefits

* VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.

NCE60P50K Application

General Features
* VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .

NCE60P50K Description

The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features
* VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
* High .

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