NCE60P50K
Description
The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
- VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Load switch
100% UIS TESTED! 100% ∆Vds TESTED!
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drai...
